Up a level |
Kranthi, N K and Mishra, Abhishek and Meersha, Adil and Variar, Harsha B and Shrivastava, Mayank (2018) Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame.
Kranthi, NK and Mishra, Abhishek and Meersha, Adil and Shrivastava, Mayank (2017) ESD Behavior of Large Area CVD Graphene RF Transistors: Physical Insights and Technology Implications. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Meersha, Adil and Sathyajith, B and Shrivastava, Mayank (2017) A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 435-440.
Meersha, Adil and Variar, H B and Bhardwaj, K and Mishra, A and Raghavan, S and Bhat, N and Shrivastava, Mayank (2016) Record Low Metal - (CVD) Graphene Contact Resistance Using Atomic Orbital Overlap Engineering. In: 62nd Annual IEEE International Electron Devices Meeting (IEDM), DEC 03-07, 2016, San Francisco, CA.
Mishra, Abhishek and Meersha, Adil and Raghavan, Srinivasan and Shrivastava, Mayank (2017) Observing non-equilibrium state of transport through graphene channel at the nano-second time-scale. In: APPLIED PHYSICS LETTERS, 111 (26).