Browse by IISc Authors

Conference Paper

Variar, HB and Singh, A and Soni, A and Shrivastava, M (2022) Exploring the Feasibility of AlN/GaN HEMTs for THz Applications Using a Novel Device-Circuit Co-Design Approach. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.

Shankar, B and Soni, A and Dutta Gupta, S and Shikha, S and Singh, S and Raghavan, S and Shrivastava, M (2019) Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress. In: 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, 1 December 2018- 5 December 2018, San Francisco, 34.6.1-34.6.4.

Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.

Journal Article

Soni, A and Shrivastava, M (2022) Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs. In: IEEE Access, 10 . pp. 74533-74541.

Shankar, B and Shikha, S and Singh, A and Kumar, J and Soni, A and Dutta Gupta, S and Raghavan, S and Shrivastava, M (2020) Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs under Fast Cyclic Transient Stress. In: IEEE Transactions on Device and Materials Reliability, 20 (3). pp. 562-569.

Soni, A and Ajay, . and Shrivastava, M (2020) Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD-RON Tradeoff and RF PA Performance. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1718-1725.

Soni, A and Shrivastava, M (2019) Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs. In: IEEE Journal of the Electron Devices Society, 8 . pp. 33-41.