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Soman, Rohith and Raghavan, Srinivasan and Bhat, Navakanta (2019) An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (12).
Kumar, Sandeep and Soman, Rohith and Pratiyush, Anamika Singh and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Performance Comparison Between beta-Ga2O3 and GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3310-3317.
Soman, Rohith and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Bhat, Navakanta and Raghavan, Srinivasan (2018) Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates. In: JOURNAL OF APPLIED PHYSICS, 124 (24).
Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2017) ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 361-365.
Prajapati, Chandra Shekhar and Soman, Rohith and Rudraswamy, S B and Nayak, Manjunatha and Bhat, Navakanta (2017) Single Chip Gas Sensor Array for Air Quality Monitoring. In: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 26 (2). pp. 433-439.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Bardhan, Abheek and Mohan, Nagaboopathy and Soman, Rohith and Manikant, * and Raghavan, Srinivasan (2016) Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111). In: IETE TECHNICAL REVIEW, 33 (1, SI). pp. 82-87.
Mohan, Nagaboopathy and Manikant, * and Soman, Rohith and Raghavan, Srinivasan (2015) Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes. In: JOURNAL OF APPLIED PHYSICS, 118 (13).
