ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

A Performance Comparison Between beta-Ga2O3 and GaN HEMTs

Kumar, Sandeep and Soman, Rohith and Pratiyush, Anamika Singh and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Performance Comparison Between beta-Ga2O3 and GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3310-3317.

[img] PDF
iee_tra_ele_dev_66-8_3310_2019.pdf - Published Version
Restricted to Registered users only

Download (2MB) | Request a copy
Official URL: https://dx.doi.org/10.1109/TED.2019.2924453


We report on the quantitative estimates of various metrics of performance for beta-Ga2O3-based high electron mobility transistors (HEMTs) for RF and power applications and compare them with III-nitride devices. Device parameters such as electron velocity and current density are estimated based on an optical phonon model reported earlier. 2-D simulation using an appropriate velocity-field relationshipwas employed to study the device characteristics and to assess the RF performance. It is found that despite a lower cutoff frequency, beta-Ga2O0 HEMTs are likely to provide higher RF output power compared to GaN HEMTs in the low-frequency regime. However, the thermal resistance (TR) and the channel temperature of beta-Ga2O3 HEMTs are expected to be significantly higher than those of GaN HEMTs which will pose serious limitations on heat dissipation. beta-Ga2O3 modulation doped field effect transistor on extremely thinned substrates will have similar TR s as compared to GaN devices on GaN substrates. The cutoff frequency was found to drop by 50% as the power dissipation increases from 1 to 7 W/mm. On the other hand, for estimates of dc power switching performance, we estimate the net losses as a function of device periphery and find that similar to 8x-10x lower electron mobility in Ga2O3 devices compared to that in AlGaN/GaN HEMTs will limit its dc switching as well as its ON-state performance in terms of efficiency, loss, and current carrying capability although the blocking voltage can be much higher than in GaN.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: 2-dimensional electron gas (2-DEG); beta-Ga2O3; figure of merit; high electron mobility transistor (HEMT)
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 05 Sep 2019 05:47
Last Modified: 05 Sep 2019 05:47
URI: http://eprints.iisc.ac.in/id/eprint/63455

Actions (login required)

View Item View Item