Browse by IISc Authors

Conference Proceedings

Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Jali, VM and Krupanidhi, SB (2014) Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy. In: 10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, pp. 932-935.

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011 , Kanpur, INDIA.

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Wurtzite InN nanodots on Si(100) by molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011, Kanpur, INDIA.

Journal Article

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Krupanidhi, SB (2015) Binary group III-nitride based heterostructures: band offsets and transport properties. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48 (42).

Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB and Kumar, Nitesh and Sundaresan, A (2015) Observation of Room Temperature Ferromagnetism in InN Nanostructures. In: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 15 (6). pp. 4426-4430.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2013) Substrate impact on the growth of InN nanostructures by droplet epitaxy. In: Physica Status Solidi (c), 10 (3). pp. 409-412.

Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kumar, Mahesh and Krupanidhi, SB (2013) Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction. In: Journal of Nanoscience and Nanotechnology, 13 (1). pp. 498-503.

Bhat, Thirumaleshwara N. and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2013) Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 24 (9). pp. 3371-3375.

Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Krupanidhi, SB (2013) Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire. In: Physica Status Solidi C - Current Topics in Solid State Physics, 10 (3). pp. 381-384.

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB (2012) Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE. In: Journal of Crystal Growth, 354 (1). pp. 208-211.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 152 (18). pp. 1771-1775.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE. In: MATERIALS RESEARCH BULLETIN, 47 (6). pp. 1306-1309.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (5). pp. 994-997.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy. In: THIN SOLID FILMS, 520 (15). pp. 4911-4915.

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2012) Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction. In: Journal of Applied Physics, 112 (2).

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2012) Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy. In: APPLIED PHYSICS EXPRESS, 5 (8).