Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2012) Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy. In: APPLIED PHYSICS EXPRESS, 5 (8).
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Abstract
The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physics
| Item Type: | Journal Article |
|---|---|
| Publication: | APPLIED PHYSICS EXPRESS |
| Publisher: | JAPAN SOC APPLIED PHYSICS |
| Additional Information: | Copyright for this article belongs to the Japan Society of Applied Physics |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 11 Sep 2012 07:56 |
| Last Modified: | 11 Sep 2012 07:56 |
| URI: | http://eprints.iisc.ac.in/id/eprint/45014 |
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