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Substrate impact on the growth of InN nanostructures by droplet epitaxy

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2013) Substrate impact on the growth of InN nanostructures by droplet epitaxy. In: Physica Status Solidi (c), 10 (3). pp. 409-412.

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Official URL: http://dx.doi.org/10.1002/pssc.201200585


The substrate effect on InN nanostructures grown by droplet epitaxy has been studied. InN nanostructures were fabricated on Si(111), silicon nitride/Si(111), AlN/Si(111) and Ge(100) substrates by droplet epitaxy using an RF plasma nitrogen source. The morphologies of InN nanostructures were investigated by field emission scanning electron microscopy (FESEM). The chemical bonding configurations of InN nanostructures were examined by x-ray photoelectron spectroscopy (XPS). Photoluminescence spectrum slightly blue shifted compared to the bulk InN, indicating a strong Burstein-Moss effect due to the presence of high electron concentration in the InN dots.

Item Type: Journal Article
Publication: Physica Status Solidi (c)
Series.: Physica Status Solidi C-Current Topics in Solid State Physics
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA
Additional Information: 4th International Symposium on Growth of III-Nitrides (ISGN), Saint-Petersburg, RUSSIA, JUL 16-19, 2012
Keywords: InN; Droplet Epitaxy; Nanostructures; MBE
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 21 May 2013 11:54
Last Modified: 21 May 2013 11:54
URI: http://eprints.iisc.ac.in/id/eprint/46591

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