Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011 , Kanpur, INDIA.
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The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be 0 0 0 1] GaN parallel to -1 1 0 1] sapphire and -1 1 0 0] GaN parallel to 1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | Proceedings of SPIE |
| Publisher: | SPIE-INT SOC OPTICAL ENGINEERING |
| Additional Information: | 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), Kanpur, INDIA, DEC 19-22, 2011 |
| Keywords: | Nonpolar GaN; molecular beam epitaxy; Schottky diode |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 07 Nov 2013 06:25 |
| Last Modified: | 07 Nov 2013 06:25 |
| URI: | http://eprints.iisc.ac.in/id/eprint/47701 |
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