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Kumar, J and Meersha, A and Ansh, A and Shrivastava, M (2019) A First principle insight into defect assisted contact engineering at the metal-graphene and metal-phosphorene interfaces. In: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, 4 - 6 September 2019, Udine.
Mishra, A and Meersha, A and Kranthi, NK and Trivedi, K and Variar, HB and Veenadhari Bellamkonda, NS and Raghavan, S and Shrivastava, M (2019) First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Hemanjaneyulu, K and Khaneja, M and Meersha, A and Variar, HB and Shrivastava, M (2018) Comprehensive Computational Modelling Approach for Graphene FETs. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.
Ansh, A and Patbhaje, U and Kumar, J and Meersha, A and Shrivastava, M (2023) Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition. In: Communications Materials, 4 (1).
Kumar, J and Meersha, A and Variar, HB and Mishra, A and Shrivastava, M (2022) Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs. In: IEEE Transactions on Electron Devices, 69 (4). pp. 2066-2073.
Hemanjaneyulu, K and Meersha, A and Kumar, J and Shrivastava, M (2022) Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution. In: IEEE Transactions on Electron Devices, 69 (4). pp. 1956-1963.
Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.
