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Medury, Aditya Sankar and Bhat, Navakanta and Bhat, KN (2011) Temperature dependence of threshold voltage for ultra thin silicon film symmetric double-gate MOSFETs. In: International Workshop on Physics of Semiconductor Devices, 19-22 Dec, 2011, Indian Institute of Technology Kanpur.
Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2016) Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs. In: MICROELECTRONICS JOURNAL, 55 . pp. 143-151.
Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2013) Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET). In: JOURNAL OF APPLIED PHYSICS, 114 (1).
Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2012) Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor. In: Journal of Applied Physics, 112 (2).
