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Journal Article

Hemanjaneyulu, Kuruva and Kumar, Jeevesh and Shrivastava, Mayank (2019) MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (7). pp. 3224-3228.

Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.