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Conference Paper

Asokan, S and Savransky, SD and Pattanayak, Pulok and Anbarasu, M (2005) Functionally Expanded Phase-Change Memory: Experiments on Light Influence on Threshold Voltage. In: 2005 Non-Volatile Memory Technology Symposium, 7-10 November, Dallas,Texas, pp. 69-71.

Journal Article

Anbarasu, M and Asokan, S (2011) Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications. In: Journal of Applied Physics, 109 (8).

Anbarasu, M and Asokan, S and Prusty, Sudakshina and Sood, AK (2009) Structural origin of set-reset processes in Ge15Te83Si2 glass investigated using in situ Raman scattering and transmission electron microscopy. In: Journal Of Applied Physics, 105 (8).

Anbarasu, M and Singh, KK and Asokan, S (2008) The presence of a thermally reversing window in Al–Te–Si glasses revealed by alternating differential scanning calorimetry and electrical switching studies. In: Journal of Non-Crystalline Solids, 354 (28). pp. 3369-3374.

Anbarasu, M and Singh, KK and Asokan, S (2008) Evidence for a thermally reversing window in bulk Ge-Te-Si glasses revealed by alternating differential scanning calorimetry. In: Philosophical Magazine, 88 (4). 599 -605.

Asokan, S and Singh, KK and Anbarasu, M (2008) Evidence for a thermally reversing window in bulk Ge–Te–Si glasses revealed by alternating differential scanning calorimetry. In: Philosophical Magazine, 88 (4). pp. 599-605.

Anbarasu, M and Asokan, S (2007) The influence of network rigidity on the electrical switching behaviour of Ge–Te–Si glasses suitable for phase change memory applications. In: Journal of Physics D: Applied Physics, 40 (23). pp. 7515-7518.

Anbarasu, M and Asokan, S and Prusty, Sudakshina and Sood, AK (2007) Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass. In: Applied Physics Letters, 91 (9).

Anbarasu, M and Asokan, S (2004) Electrical switching behavior of bulk As-Te-Si glasses: Composition dependence and topological effects. In: Applied Physics A: Materials Science & Processing, 80 (2). pp. 249-252.