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Functionally Expanded Phase-Change Memory: Experiments on Light Influence on Threshold Voltage

Asokan, S and Savransky, SD and Pattanayak, Pulok and Anbarasu, M (2005) Functionally Expanded Phase-Change Memory: Experiments on Light Influence on Threshold Voltage. In: 2005 Non-Volatile Memory Technology Symposium, 7-10 November, Dallas,Texas, pp. 69-71.


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We describe the first experimental results of a light influence on the threshold voltage Vt in new ternary lead-free telluride compound (labeled as SA1). Reduction of Vt on about 35% in SA1 illuminated by Ar ion laser to compare dark Vt is discovered. More than 10,000 switching cycles without degradation have been recorded. Variation of the laser power allows achieving Vt reduction in SA1 down to 40% from the dark level. This is the largest change of Vt known for amorphous chalcogenides. It opens new horizons for chalcogenide functionally expanded phase change memory. Some ideas about the mechanism of the observed effect, related with the photo-generation of charge carriers and possible mechanisms of transition from OFF state to ON state, are discussed.

Item Type: Conference Paper
Publisher: IEEE
Additional Information: Copyright 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Telluride alloys;Threshold switching;Light influence;Functionally expanded PC-RAM
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 25 Aug 2008
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ac.in/id/eprint/8403

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