Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass

Anbarasu, M and Asokan, S and Prusty, Sudakshina and Sood, AK (2007) Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass. In: Applied Physics Letters, 91 (9).

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Abstract

Bulk Ge15Te83Si2 glass has been found to exhibit memory-type switching for 1 mA current with a threshold electric field of 7.3 kV/cm. The electrical set and reset processes have been achieved with triangular and rectangular pulses, respectively, of 1 mA amplitude. In situ Raman scattering studies indicate that the degree of disorder in Ge15Te83Si2 glass is reduced from off to set state. The local structure of the sample under reset condition is similar to that in the off state. The Raman results are consistent with the switching results which indicate that the Ge15Te83Si2 glass can be set and reset easily. (C) 2007 American Institute of Physics.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	10 Jun 2010 10:30
Last Modified:	19 Sep 2010 05:57
URI:	http://eprints.iisc.ac.in/id/eprint/26209

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