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Muazzam, UU and Raghavan, MS and Pratiyush, AS and Muralidharan, R and Raghavan, S and Nath, DN and Shivashankar, SA (2020) High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition. In: Journal of Alloys and Compounds, 828 .
Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.
Kumar, S and Pratiyush, AS and Dolmanan, SB and Tan, HR and Tripathy, S and Muralidharan, R and Nath, DN (2019) Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1- xN/GaN High Electron Mobility Transistor Structures on Si (111). In: ACS Applied Electronic Materials, 1 (3). pp. 340-345.
Pratiyush, AS and Krishnamoorthy, S and Kumar, S and Xia, Z and Muralidharan, R and Rajan, S and Nath, DN (2018) Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. In: Japanese Journal of Applied Physics, 57 (6).
