Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1- xN/GaN High Electron Mobility Transistor Structures on Si (111)

Kumar, S and Pratiyush, AS and Dolmanan, SB and Tan, HR and Tripathy, S and Muralidharan, R and Nath, DN (2019) Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1- xN/GaN High Electron Mobility Transistor Structures on Si (111). In: ACS Applied Electronic Materials, 1 (3). pp. 340-345.

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Abstract

In this article, we report on an optically coupled, electrically isolated switch based on the III-nitride heterostructures on a silicon substrate. All the circuit elements, including the ultraviolet (UV) detector and a normally on transistor, were monolithically integrated on a single AlxGa1-xN/GaN high electron mobility transistor (HEMT) stack grown on a 200 mm Si (111) substrate, and the process was fully compatible with conventional III-N HEMT fabrication flow. On-wafer UV detector was realized using a gate-recessed architecture which exhibited excellent spectral responsivity and broadband nature, while the discrete HEMT was found to exhibit ON current of 500 mA/mm. The integrated system was found to switch from an OFF-state current of 5 μA (UV-Off) to an ON-state current of 50 mA (UV-ON) in ∼4 ms, and this delay may be further reduced with optimization of such a monolithic device design and improvement of crystal quality of nitrides on the large area Si platforms. Copyright © 2019 American Chemical Society.

Item Type:	Journal Article
Publication:	ACS Applied Electronic Materials
Publisher:	American Chemical Society
Additional Information:	The copyright for this article belongs to American Chemical Society
Keywords:	Electron mobility; Monolithic integrated circuits; Nitrides; Silicon wafers; Single electron transistors; Substrates, High electron mobility transistor (HEMT); Integrated systems; Monolithic devices; Monolithically integrated; Off-state current; Si(111) substrate; Silicon substrates; Spectral responsivity, High electron mobility transistors
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	14 Dec 2022 11:29
Last Modified:	14 Dec 2022 11:29
URI:	https://eprints.iisc.ac.in/id/eprint/78361

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