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Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Pratiyush, AS and Krishnamoorthy, S and Kumar, S and Xia, Z and Muralidharan, R and Rajan, S and Nath, DN (2018) Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. In: Japanese Journal of Applied Physics, 57 (6).

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Official URL: https://doi.org/10.7567/JJAP.57.060313


We demonstrate zero-bias spectral responsivity in MBE-grown β-Ga2O3 planar UV-C detector with good linearity up to optical power density of 4.6 mWcm-2. Devices with asymmetrical metal contacts were realized on 150nm thick β-Ga2O3 films on sapphire. The device exhibited a spectral responsivity of 1.4mAW-1 at 255nm under zero-bias condition, dark current <10 nA at 15V and UV-to-visible rejection ratio ∼105 at 5 V. The demonstrated UV-C detector exhibited an estimated high detectivity of 2.0×1012 Jones at 1V and were found to be very stable and repeatable, suggesting its potential use for focal plane arrays.

Item Type: Journal Article
Publication: Japanese Journal of Applied Physics
Publisher: Japan Society of Applied Physics
Additional Information: The copyright for this article belongs to the Japan Society of Applied Physics.
Keywords: Sapphire, Detectivity; Metal contacts; Optical power density; Rejection ratios; Responsivity; Spectral responsivity; Zero bias; Zero bias conditions, Gallium compounds
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 10 Aug 2022 11:33
Last Modified: 10 Aug 2022 11:33
URI: https://eprints.iisc.ac.in/id/eprint/75525

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