ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Browse by IISc Authors

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 5.

Conference Paper

Shankar, B and Soni, A and Dutta Gupta, S and Shikha, S and Singh, S and Raghavan, S and Shrivastava, M (2019) Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress. In: 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, 1 December 2018- 5 December 2018, San Francisco, 34.6.1-34.6.4.

Journal Article

Dutta Gupta, S and Joshi, V and Chaudhuri, RR and Shrivastava, M (2022) Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1608-1611.

Joshi, V and Dutta Gupta, S and Roy Chaudhuri, R and Shrivastava, M (2021) Physical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i. In: IEEE Transactions on Electron Devices, 68 (1). pp. 72-79.

Dutta Gupta, S and Joshi, V and Roy Chaudhuri, R and Shrivastava, M (2021) Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors. In: Journal of Applied Physics, 130 (1).

Shankar, B and Shikha, S and Singh, A and Kumar, J and Soni, A and Dutta Gupta, S and Raghavan, S and Shrivastava, M (2020) Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs under Fast Cyclic Transient Stress. In: IEEE Transactions on Device and Materials Reliability, 20 (3). pp. 562-569.

This list was generated on Sat Oct 5 17:57:02 2024 IST.