Mahajan, M and Majumdar, K (2022) Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS2/2H-TaSe2/2H-MoS2 Heterostructure. In: Advanced Electronic Materials .
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Abstract
1T-TaS2 exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past toward active-metal based electronics. However, the bias-driven resistivity switching is not very large (less than five-fold), and an enhancement in the same will highly impact such phase transition devices. One aspect that is often overlooked is that such phase transition is also accompanied by a significant change in the local temperature due to the low thermal conductivity of 1T-TaS2. In this work, such electrically driven phase transition induced temperature change is exploited to promote carriers over a thermionic barrier in a 1T-TaS2/2H-TaSe2/2H-MoS2 T-Junction, achieving a 964-fold abrupt switching in the current through the MoS2 channel. The device is highly reconfigurable and exhibits an abrupt reduction in current as well when the biasing configuration changes. The results are promising for several electronic applications, including neuromorphic chips, switching, nonlinear devices, and industrial electronics such as current and temperature sensing. © 2022 Wiley-VCH GmbH.
| Item Type: | Journal Article |
|---|---|
| Publication: | Advanced Electronic Materials |
| Publisher: | John Wiley and Sons Inc |
| Additional Information: | The copyright for this article belongs to the Authors. |
| Keywords: | Charge density; Charge density waves; Metals; Molybdenum compounds; Selenium compounds; Switching; Tantalum compounds; Thermal conductivity, 'current; 1t-TaS 2; 2h-MoS 2; 2h-tase 2; Active metals; Charge-density-waves; Current switching; MoS 2; Negative differential resistances; Thermionic currents, Layered semiconductors |
| Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 10 Oct 2022 05:39 |
| Last Modified: | 10 Oct 2022 05:39 |
| URI: | https://eprints.iisc.ac.in/id/eprint/77327 |
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