Inkjet-Printed, Deep Subthreshold Operated Pseudo-CMOS Inverters with High Voltage Gain and Low Power Consumption

Pradhan, JR and Singh, M and Dasgupta, S (2022) Inkjet-Printed, Deep Subthreshold Operated Pseudo-CMOS Inverters with High Voltage Gain and Low Power Consumption. In: Advanced Electronic Materials .

PDF adv_ele_mat_2022.pdf - Published Version Restricted to Registered users only Download (4MB) | Request a copy

Abstract

Oxide electronics has received increasing research and industrial attention in recent years. Solution-processed/printed thin film transistors (TFTs) have rapidly matured to challenge its organic counterparts. However, when the n-type oxides can demonstrate high mobility band transport, the performance of the p-type ones is still weak. Consequently, examples of all-oxide circuits are rare in the literature. Here printed amorphous indium-gallium-zinc oxide (a-IGZO) based all-oxide pseudo-CMOS inverters, ring oscillators, and static random access memories (SRAMs), where the doping density and the device aspect ratio-controlled deep-subthreshold region offers sharp switching of the input signal is shown. For example, the signal gain (η) of pseudo-CMOS 2T and 4T inverters is recorded as 285 and 329, respectively. Furthermore, the deep subthreshold operation ensures low dynamic power consumption, only few tens of nanowatts up to 1.5 V supply voltage. The inverters have demonstrated rail-to-rail swing up to 30 kHz and the 3-stage ring oscillators recorded oscillation frequency of 6.7 kHz. The SRAM devices have shown satisfactory noise margins at HOLD-, READ-, and WRITE-states, while their transient response is also recorded. These fully-printed all-oxide TFTs and circuits can be of large interest in portable/wearable electronics, display backplanes, interfacing circuits for sensors, etc. © 2022 Wiley-VCH GmbH.

Item Type:	Journal Article
Publication:	Advanced Electronic Materials
Publisher:	John Wiley and Sons Inc
Additional Information:	The copyright for this article belongs to the John Wiley and Sons Inc.
Keywords:	Aspect ratio; CMOS integrated circuits; Cost effectiveness; Electric power utilization; Gallium compounds; II-VI semiconductors; Industrial research; Oscillators (electronic); Semiconducting indium compounds; Semiconductor doping; Static random access storage; Thin film circuits; Thin films; Threshold voltage; Transient analysis; Zinc oxide, C. thin film transistor (TFT); CMOS inverters; High voltage gain; Indium gallium zinc oxide; Ink jet; Ink-jet printing; Pseudo-CMOS inverter; Ring oscillator; Static random access memory; Subthreshold, Thin film transistors
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	21 Sep 2022 09:53
Last Modified:	21 Sep 2022 09:53
URI:	https://eprints.iisc.ac.in/id/eprint/76758

Actions (login required)

View Item