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Effect of Fluorination on the D-A-D type Hole Transporting Materials for Perovskite Solar Cells

Chandrashekara, GK and Reddy, S and Ramamurthy, PC (2018) Effect of Fluorination on the D-A-D type Hole Transporting Materials for Perovskite Solar Cells. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.

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Official URL: https://doi.org/10.1109/ICEE44586.2018.8937938

Abstract

To study the effect of fluorination on hole transporting materials (BTD-Th and BTD-F-Th) for the efficient perovskite solar cells, we designed and synthesized a novel D-A-D type hole transporting molecule having benzo1,2-c1,2,5thiadiazole (BTD) as electron acceptor unit and thiophene (Th) as a simple electron donor unit. The D-A-D molecules BTD-Th and BTD-F-Th were synthesized by palladium(0) catalyzed Stille coupling reaction. The electrochemical band gap of synthesized compounds varies from -1.5 eV to -1.7 eV, Which were ideal for hole transport material (with perovskite active layer) and effective electron blocking layer. The architecture of the perovskite device is glass/ITO/SnO2/CH3NH3PbI3(Perovskite)/Hole Transport Material/Ag.

Item Type: Conference Paper
Publication: 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Energy gap; Fluorination; Halogenation; Hole mobility; Molecules; Perovskite; Synthesis (chemical); Thiophene, 5]thiadiazole; Effective electrons; Hole transport materials; Hole transporting molecules; Hole-transporting materials; Introduction; Stille coupling reaction; Transport materials, Perovskite solar cells
Department/Centre: Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 01 Aug 2022 08:48
Last Modified: 01 Aug 2022 08:48
URI: https://eprints.iisc.ac.in/id/eprint/75089

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