ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Zr-based quaternary half-Heusler alloy systems ZrNimX0.5Sb1.5−m (X[dbnd]Fe/In): Studies on phase evolution, crystal structures and electronic properties

kumar, D and Legese, SS and Mukherjee, S and Femi, OE and Narayanan, R and Chattopadhyay, K (2022) Zr-based quaternary half-Heusler alloy systems ZrNimX0.5Sb1.5−m (X[dbnd]Fe/In): Studies on phase evolution, crystal structures and electronic properties. In: Journal of Alloys and Compounds, 908 .

[img] PDF
jou_all_com_908_2022.pdf - Published Version
Restricted to Registered users only

Download (5MB) | Request a copy
[img] Microsoft Word
supplementary_jou_all_com_908_2022.docx - Published Supplemental Material

Download (1MB)
Official URL: https://doi.org/10.1016/j.jallcom.2022.164604

Abstract

Half Heusler(hH) compounds have demonstrated exceptional capability in a wide range of functional applications as semiconductors. Although there are theoretical predictions about newer compounds and their thermodynamic stability, experimental validation is often missing. In this study, we report two quaternary multicomponent Zr-based hH alloy systems, namely ZrNi0.5Fe0.5Sb and ZrNiIn0.5Sb0.5, designed by combining 19 and 17 VEC (valence electron count) alloy systems. The structural features, including the crystal structures and compositions, were established using multiple techniques like X-ray diffraction, scanning and transmission electron microscopy. Both these systems crystallized in signature hH cubic structure (F43̅m) having lattice parameters 0.6091 nm and 0.6104 nm, respectively. The measurement of Seebeck coefficients over a wide temperature range showed p-to n-type semiconductor transition in ZrNi0.5Fe0.5Sb at around 888 K due to bipolar conduction. Subsequently, the partial substitution of Co for Fe sites (ZnNi0.5Fe0.3Co0.2Sb) completely suppressed the bipolar conductivity, making it a n-type semiconductor and increased the absolute value of Seebeck coefficient, by an order of magnitude, to − 133μV/K. The alloy ZrNiIn0.5Sb0.5 showed n-type semiconductor behavior throughout the measurement temperature range. This study conducts an in-depth examination of the microstructural phase evolution, chemical environment of the elements forming the novel hH phase and demonstrates the tunability of electronic properties through aliovalent substitutions at various lattice sites.

Item Type: Journal Article
Publication: Journal of Alloys and Compounds
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to the Elsevier Ltd.
Keywords: Alloying; Electronic properties; High resolution transmission electron microscopy; Scanning electron microscopy; Seebeck coefficient; Tin alloys; Zinc alloys; Zircaloy, Aliovalent substitution; Alloy system; Crystals structures; Disordered; Half-heusler; Half-Heusler alloys; N-type semiconductors; Phase evolutions; Quaternary; TEM, Crystal structure
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 27 Jun 2022 05:10
Last Modified: 27 Jun 2022 05:10
URI: https://eprints.iisc.ac.in/id/eprint/73582

Actions (login required)

View Item View Item