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Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Vura, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.
Kumar, S and Pratiyush, AS and Dolmanan, SB and Tan, HR and Tripathy, S and Muralidharan, R and Nath, DN (2019) Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1- xN/GaN High Electron Mobility Transistor Structures on Si (111). In: ACS Applied Electronic Materials, 1 (3). pp. 340-345.
