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Rojwal, Vineet and Singha, Monoj Kumar and Mondal, TK and Mondal, Debojyoti (2018) Formation of micro structured doped and undoped hydrogenated silicon thin films. In: SUPERLATTICES AND MICROSTRUCTURES, 124 . pp. 201-217.
Chander, Subhash and Gupta, Samuder and Ajay, - and Gupta, Mridula (2018) Enhancement of breakdown voltage in AlGaN/GaN HEMT using passivation technique for microwave application. In: SUPERLATTICES AND MICROSTRUCTURES, 120 . pp. 217-222.
Vishal, Badri and Singh, Rajendra and Chaturvedi, Abhishek and Sharma, Ankit and Sreedhara, M B and Sahu, Rajib and Bhat, Usha and Ramamurty, Upadrasta and Datta, Ranjan (2018) Chemically stabilized epitaxial wurtzite-BN thin film. In: SUPERLATTICES AND MICROSTRUCTURES, 115 . pp. 197-203.
Nagapure, Dipak Ramdas and Patil, Rhishikesh Mahadev and Chandra, Hema G and Sunil, Anantha M and Subbaiah, Venkata Y P and Gupta, Mukul and Rao, R Prasada (2017) Impact of selenization pressure on the micro-structural properties of Cu2ZnSnSe4 thin films. In: SUPERLATTICES AND MICROSTRUCTURES, 110 . pp. 252-264.
Gyanan, * and Mondal, Sandip and Kumar, Arvind (2016) Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics. In: SUPERLATTICES AND MICROSTRUCTURES, 100 . pp. 876-885.
Kaur, Palvinder and Kumar, Sanjeev and Singh, Anupinder and Chen, CL and Dong, CL and Chang, TS and Lee, KP and Srivastava, C and Rao, SM and Wu, MK (2015) Investigations on doping induced changes in structural, electronic structure and magnetic behavior of spintronic Cr-ZnS nanoparticles. In: SUPERLATTICES AND MICROSTRUCTURES, 83 . pp. 785-795.
Mariappan, R and Ponnuswamy, V and Suresh, P and Ashok, N and Jayamurugan, P and Bose, Chandra A (2014) Influence of film thickness on the properties of sprayed ZnO thin films for gas sensor applications. In: SUPERLATTICES AND MICROSTRUCTURES, 71 . pp. 238-249.
Sekhar, Chandra M and Kondaiah, P and Rao, Mohan G and Chandra, Jagadeesh SV and Uthanna, S (2013) Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors. In: SUPERLATTICES AND MICROSTRUCTURES, 62 . pp. 68-80.