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Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors

Sekhar, Chandra M and Kondaiah, P and Rao, Mohan G and Chandra, Jagadeesh SV and Uthanna, S (2013) Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors. In: SUPERLATTICES AND MICROSTRUCTURES, 62 . pp. 68-80.

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Official URL: http://dx.doi.org/10.1016/j.spmi.2013.07.001


Titanium dioxide (TiO2) thin films are deposited on unheated p-Si (100) and quartz substrates by employing DC reactive magnetron sputtering technique. The effect of post-deposition annealing in air at temperatures in the range 673-973 K on the structural, electrical, and dielectric properties of the films was investigated. The chemical composition of the TiO2 films was analyzed with X-ray photoelectron spectroscopy. The surface morphology of the films was studied by atomic force microscope. The optical band gap of the as-deposited film was 3.50 eV, and it increased to 3.55 eV with the increase in annealing temperature to 773 K. The films annealed at higher temperature of 973 K showed the optical band gap of 3.43 eV. Thin film capacitors were fabricated with the MOS configuration of Al/TiO2/p-Si. The leakage current density of the as-deposited films was 1.2 x 10(-6) A/cm(2), and it decreased to 5.9 x 10(-9) A/cm(2) with the increase in annealing temperature to 973 K. These films showed high dielectric constant value of 36. (C) 2013 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: copyright for this article belongs to ELSEVIER SCIENCE LTD
Keywords: Magnetron sputtering; Crystal structure; Titanium dioxide; Electrical; Dielectric properties
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 14 Nov 2013 10:45
Last Modified: 14 Nov 2013 10:45
URI: http://eprints.iisc.ac.in/id/eprint/47753

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