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Enhancement of breakdown voltage in AlGaN/GaN HEMT using passivation technique for microwave application

Chander, Subhash and Gupta, Samuder and Ajay, - and Gupta, Mridula (2018) Enhancement of breakdown voltage in AlGaN/GaN HEMT using passivation technique for microwave application. In: SUPERLATTICES AND MICROSTRUCTURES, 120 . pp. 217-222.

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Official URL: http://dx.doi.org/10.1016/j.spmi.2018.05.039


The AlGaN/GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrate with SiO2 passivation is proposed in this paper. The maximum drain current of 0.8 A/mm is observed at V-gs = 0 V for gate width (W-G) = 600 mu m. The breakdown voltage of device with SiO2 passivation is compared with breakdown voltage of device with SiN passivation and it is found that the breakdown voltage improved in the device with SiO2 passivation. The breakdown voltage of the device with SiO2 and SiN passivation are 312 V and 287 V, respectively. Furthermore, the improvement in the breakdown voltage is observed with increase of buffer thickness. The obtained breakdown voltages are 312 V, 390 V and 412 V for buffer thickness of 2 mu m, 3 mu m and 5 mu m, respectively. In addition to breakdown analysis, the impact of passivation on intrinsic capacitance is investigated and found that the device with SiO2 passivation exhibits a reduction in gate-source capacitance (C-SG) and gate - to - drain capacitance (C-GD).

Item Type: Journal Article
Publisher: Academic Press
Additional Information: The copyright of this article belongs to the ACADEMIC PRESS LTD-
Keywords: AlGaN; Breakdown voltage; GaN; HEMT; High power; High frequency
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 17 Oct 2018 14:26
Last Modified: 26 Jul 2022 09:08
URI: https://eprints.iisc.ac.in/id/eprint/60907

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