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Ahmed, Tanweer and Naik, Mit H and Kumari, Simran and Suman, Smriti P and Debnath, Rahul and Dutta, Sudipta and Waghmare, Umesh and Jain, Manish and Ghosh, Arindam (2019) Thermodynamically stable octahedral MoS2 in van der Waals hetero-bilayers. In: 2D MATERIALS, 6 (4).
Paul, Tathagata and Ahmed, Tanweer and Tiwari, Krishna Kanhaiya and Thakur, Chetan Singh and Ghosh, Arindam (2019) A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing. In: 2D MATERIALS, 6 (4).
Aamir, Md Ali and Ghosh, Arindam (2019) Electrical noise inside the band gap of bilayer graphene. In: 2D MATERIALS, 6 (2).
Kim, Joon-Seok and Ahmad, Rafia and Pandey, Tribhuwan and Rai, Amritesh and Feng, Simin and Yang, Jing and Lin, Zhong and Terrones, Mauricio and Banerjee, Sanjay K and Singh, Abhishek K and Akinwande, Deji and Lin, Jung-Fu (2017) Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain. In: 2D MATERIALS, 5 (1).
Chakraborty, Biswanath and Gupta, Satyendra Nath and Singh, Anjali and Kuiri, Manabendra and Kumar, Chandan and Muthu, DVS and Das, Anindya and Waghmare, UV and Sood, AK (2016) Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor. In: 2D MATERIALS, 3 (1).
Ram, Babu and Manjanath, Aaditya and Singh, Abhishek K (2016) Simultaneous tunability of the electronic and phononic gaps in SnS2 under normal compressive strain. In: 2D MATERIALS, 3 (1).
