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A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing

Paul, Tathagata and Ahmed, Tanweer and Tiwari, Krishna Kanhaiya and Thakur, Chetan Singh and Ghosh, Arindam (2019) A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing. In: 2D MATERIALS, 6 (4).

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Official URL: https://dx.doi.org/10.1088/2053-1583/ab23ba


As one of the most important members of the two dimensional chalcogenide family, molybdenum disulphide (MoS2) has played a fundamental role in the advancement of low dimensional electronic, optoelectronic and piezoelectric designs. Here, we demonstrate a new approach to solid state synaptic transistors using two dimensional MoS2 floating gate memories. By using an extended floating gate architecture which allows the device to be operated at near-ideal subthreshold swing of 77 mV/decade over four decades of drain current, we have realised a charge tunneling based synaptic memory with performance comparable to the state of the art in neuromorphic designs. The device successfully demonstrates various features of a biological synapse, including pulsed potentiation and relaxation of channel conductance, as well as spike time dependent plasticity (STDP). Our device returns excellent energy efficiency figures and provides a robust platform based on ultrathin two dimensional nanosheets for future neuromorphic applications.

Item Type: Journal Article
Publication: 2D MATERIALS
Additional Information: copyright for this article belongs to IOP PUBLISHING LTD
Keywords: molybdenum disulphide; synaptic transistors; floating gate memories; van der Waals heterostructure; neuromorphic computing
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 21 Aug 2019 06:43
Last Modified: 21 Aug 2019 06:43
URI: http://eprints.iisc.ac.in/id/eprint/63281

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