Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor

Chakraborty, Biswanath and Gupta, Satyendra Nath and Singh, Anjali and Kuiri, Manabendra and Kumar, Chandan and Muthu, DVS and Das, Anindya and Waghmare, UV and Sood, AK (2016) Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor. In: 2D MATERIALS, 3 (1).

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Abstract

Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with A(g) symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with B-g symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving pi and sigma bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.

Item Type:	Journal Article
Publication:	2D MATERIALS
Publisher:	IOP PUBLISHING LTD
Additional Information:	Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords:	phosphorene; phonon; Raman spectroscopy; electron-phonon coupling
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	12 May 2016 06:19
Last Modified:	12 May 2016 06:19
URI:	http://eprints.iisc.ac.in/id/eprint/53816

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