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Sinha, Rajat and Bhattacharya, Prasenjit and Sambandan, Sanjiv and Shrivastava, Mayank (2018) On the ESD Behavior of a-Si:H based Thin Film Transistors: Physical Insights, Design and Technological Implications. In: IEEE International Reliability Physics Symposium Proceedings, 11-15 March 2018, Burlingame, CA, USA.
Sinha, Rajat and Kranthi, N K and Sambandan, Sanjiv and Shrivastava, Mayank (2017) On the ESD Behavior of Pentacene Channel Organic Thin Film Transistors. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.
Sinha, Rajat and Bhattacharya, Prasenjit and Sambandan, Sanjiv and Shrivastava, Mayank (2019) Nano-second timescale high-field phase transition in hydrogenated amorphous silicon. In: JOURNAL OF APPLIED PHYSICS, 126 (13).
Sinha, Rajat and Bhattacharya, Prasenjit and Iben, Icko Eric Timothy and Sambandan, Sanjiv and Shrivastava, Mayank (2019) ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2624-2630.
