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Meneghini, M and Ng, GI and Medjdoub, F and Buffolo, M and Warnock, S and Nath, D and Suda, J and Shi, J and Shen, S-C (2024) Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications. In: IEEE Transactions on Electron Devices, 71 (3). pp. 1340-1343.
Suraj, S and Rathkanthiwar, S and Nath, D and Raghavan, S and Selvaraja, SK (2022) GaN-on-Sapphire Photonic Circuit with Polarization Independent Grating Coupler at 1550 nm. In: Optics InfoBase Conference Papers, 24 - 28 July 2022, Maastricht.
Nath, D and Kumar, U (2022) Induction mechanism and propagation characteristics of current in line conductors due to an electron avalanche. In: Journal of Electromagnetic Waves and Applications .
Kalra, A and Rathkanthiwar, S and Remesh, N and Muralidharan, R and Nath, D and Raghavan, S (2020) Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6-21 April 2020, Penang; Malaysia.
Kumar, U and Nath, D (2019) Electromagnetic field due to a single electron avalanche on transmission line conductors. In: 2019 URSI Asia-Pacific Radio Science Conference, AP-RASC 2019, 9 March 2019-15 March 2019, New Delhi.
Soman, R and Sharma, M and Ramesh, N and Nath, D and Muralidharan, R and Bhat, KN and Raghavan, S and Bhat, N (2018) (Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate. In: Symposium on High Purity and High Mobility Semiconductors 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September - 4 October 2018, Cancun, pp. 161-168.
