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Mohta, N and Rao, A and Remesh, N and Muralidharan, R and Nath, DN (2021) An artificial synaptic transistor using an α-In2Se3van der Waals ferroelectric channel for pattern recognition. In: RSC Advances, 11 (58). pp. 36901-36912.
Mech, RK and Mohta, N and Chatterjee, A and Selvaraja, SK and Muralidharan, R and Nath, DN (2020) High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3. In: Physica Status Solidi (A) Applications and Materials Science, 217 (5).
Mohta, N and Mech, RK and Sanjay, S and Muralidharan, R and Nath, DN (2020) Artificial Synapse Based on Back-Gated MoS2 Field-Effect Transistor with High-k Ta2O5 Dielectrics. In: Physica Status Solidi (A) Applications and Materials Science .
Mech, RK and Mohta, N and Muralidharan, R and Nath, DN (2019) Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer α -InSe. In: 2019 Device Research Conference (DRC), 23-26 June 2019, Ann Arbor, MI, USA, pp. 189-190.
