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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3

Mech, RK and Mohta, N and Chatterjee, A and Selvaraja, SK and Muralidharan, R and Nath, DN (2020) High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3. In: Physica Status Solidi (A) Applications and Materials Science, 217 (5).

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Official URL: https://dx.doi.org/10.1002/pssa.201900932


Herein, device demonstration based on vertical transport in multilayer α-In2Se3 is reported. Photodetectors realized using a metal/α-In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W�1 and a detectivity of >1013 cm Hz0.5 W�1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical α-In2Se3 junction resulted in a photovoltaic effect with VOC �0.1 V and ISC �0.4 μA under an illumination of 520 nm.

Item Type: Journal Article
Publication: Physica Status Solidi (A) Applications and Materials Science
Additional Information: Copyright of this article belongs to WILEY-V C H VERLAG GMBH
Keywords: Indium compounds; Multilayers; Photodetectors; Photons; Selenium compounds; Semiconducting indium; Semiconductor junctions; Tin oxides; Transient analysis, Asymmetric barriers; Indium selenide; Metal photodetectors; Optical power density; Responsivity; Self-powered; Spectral responsivity; Vertical transports, Photovoltaic effects
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 09 Jun 2020 06:06
Last Modified: 09 Jun 2020 06:06
URI: http://eprints.iisc.ac.in/id/eprint/65556

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