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Artificial Synapse Based on Back-Gated MoS2 Field-Effect Transistor with High-k Ta2O5 Dielectrics

Mohta, N and Mech, RK and Sanjay, S and Muralidharan, R and Nath, DN (2020) Artificial Synapse Based on Back-Gated MoS2 Field-Effect Transistor with High-k Ta2O5 Dielectrics. In: Physica Status Solidi (A) Applications and Materials Science .

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Official URL: https://dx.doi.org/10.1002/pssa.202000254


Herein, a multilayer MoS2-based low-power synaptic transistor using Ta2O5 as a back-gate dielectric for mimicking the biological neuronal synapse is reported. The use of high-k dielectric allows for a lower-voltage swing compared with using conventional SiO2, thus offering an attractive route to low-power synaptic device architectures. Exfoliated MoS2 is utilized as the channel material, and the hysteresis in the transfer characteristics of the transistor is exploited to demonstrate excitatory and inhibitory postsynaptic currents, long-term potentiation, and long-term depression (LTP/LTD), indirect spike timing-dependent plasticity (STDP) based on single and sequential gate (Vg) pulses, respectively. The synapse had achieved a 35 weight change in channel conductance within 15 electrical pulses for negative synaptic gate pulse and 28 change for positive synaptic gate pulse. A complete tunability of weight in the synapse by spike amplitude-dependent plasticity (SADP) at a low voltage of 4 V is also demonstrated.

Item Type: Journal Article
Publication: Physica Status Solidi (A) Applications and Materials Science
Publisher: Wiley-VCH Verlag
Additional Information: The copyright of this article belongs to Wiley-VCH Verlag
Keywords: Dielectric materials; Field effect transistors; Gate dielectrics; High-k dielectric; Layered semiconductors; Neurons; Silica; Tantalum oxides, Artificial synapse; Channel materials; Device architectures; Long term depression; Long-term potentiations; Spike amplitudes; Spike timing dependent plasticities; Transfer characteristics, Molybdenum compounds
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 25 Aug 2020 06:09
Last Modified: 25 Aug 2020 06:09
URI: http://eprints.iisc.ac.in/id/eprint/66330

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