Voltage Controlled Interlayer Exchange Coupling and Magnetic Anisotropy Effects in Perpendicular Magnetic Heterostructures

Surampalli, A and Bera, AK and Chopdekar, RV and Kalitsov, A and Wan, L and Katine, J and Stewart, D and Santos, T and Prasad, B (2024) Voltage Controlled Interlayer Exchange Coupling and Magnetic Anisotropy Effects in Perpendicular Magnetic Heterostructures. In: Advanced Functional Materials .

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Abstract

Spintronic devices that utilize spin transfer torque are promising for integrated memory applications. However, these devices face substantial energy consumption challenges due to the high current densities required for switching. Conversely, voltage-driven spintronic devices, using capacitive displacement charge, can realize switching operations that are energy-efficient (�1�10 fJ bit�1). This work investigates switching based on voltage control of the interlayer exchange coupling in perpendicular magnetic anisotropy (PMA) multilayered heterostructures. Unlike previous works that utilized gating techniques that employ ionic transport mechanisms to control interlayer exchange coupling, this study employs electrostatic gating by using MgO, which is more compatible with modern spintronic-based memories. These results suggest that the magnetization anisotropy, and the magnitude, and phase of the Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling function with spacer layer thickness can be controlled through electric gating, providing a promising avenue for the development of energy-efficient magnetic data storage devices. © 2024 Wiley-VCH GmbH.

Item Type:	Journal Article
Publication:	Advanced Functional Materials
Publisher:	John Wiley and Sons Inc
Additional Information:	The copyright for this article belongs to John Wiley and Sons Inc
Keywords:	Energy efficiency; Energy utilization; Exchange coupling; Ion exchange; Magnesia; Magnetic recording; MRAM devices; Tunnel junctions; Virtual storage, Anisotropy effect; Energy efficient; Interlayer exchange coupling; Magnetic heterostructures; MRAM; Non-volatile memory; Spin transfer torque; Spintronics device; Voltage control of magnetism; Voltage-controlled, Magnetic anisotropy
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	21 Dec 2024 04:30
Last Modified:	21 Dec 2024 04:30
URI:	http://eprints.iisc.ac.in/id/eprint/85934

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