Chowdhury, S and Jana, A and Rawat, R and Yadav, P and Islam, R and Xue, F and Mandal, AK and Sarkar, S and Mishra, R and Venkatesh, R and Phase, DM and Choudhary, RJ (2024) High-temperature insulating ferromagnetic state in charge-disproportionated and spin-state-disproportionated strained SrCoO2.5 thin film. In: APL Materials, 12 (5).
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Abstract
Ferromagnetic insulators (FMIs) have widespread applications in microwave devices, magnetic tunneling junctions, and dissipationless electronic and quantum-spintronic devices. However, the sparsity of the available high-temperature FMIs has led to the quest for a robust and controllable insulating ferromagnetic state. Here, we present compelling evidence of modulation of the magnetic ground state in a SrCoO2.5 (SCO) thin film via strain engineering. The SCO system is an antiferromagnetic insulator with a Neel temperature, TN, of ~550 K. Applying in-plane compressive strain, the SCO thin film reveals an insulating ferromagnetic state with an extraordinarily high Curie temperature, TC, of ~750 K. The emerged ferromagnetic state is associated with charge-disproportionation (CD) and spin-state-disproportionation (SSD), involving high-spin Co2+ and low-spin Co4+ ions. The density functional theory calculation also produces an insulating ferromagnetic state in the strained SCO system, consistent with the CD and SSD, which is associated with the structural ordering in the system. Transpiring the insulating ferromagnetic state through modulating the electronic correlation parameters via strain engineering in the SCO thin film will have a significant impact in large areas of modern electronic and spintronic applications. © 2024 Author(s).
| Item Type: | Journal Article |
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| Publication: | APL Materials |
| Publisher: | American Institute of Physics |
| Additional Information: | The copyright for this article belongs to authors. |
| Keywords: | Antiferromagnetism; Density functional theory; Ferromagnetic materials; Ferromagnetism; Ground state; Insulation; Spin dynamics; Strontium compounds, Charge disproportionation; Disproportionations; Ferromagnetic insulator; Ferromagnetic state; Highest temperature; Magnetic tunneling junctions; Spin state; Spintronics device; Strain engineering; Thin-films, Thin films |
| Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
| Date Deposited: | 19 Aug 2024 06:42 |
| Last Modified: | 19 Aug 2024 06:42 |
| URI: | http://eprints.iisc.ac.in/id/eprint/85466 |
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