|
 | Up a level |
Bhattacharjee, Shubhadeep and Biswas, Pranandita and Solanke, Swanand and Muralidharan, Rangarajan and Nath, Digbijoy and Bhat, Navakanta (2018) Optoelectronics based on Vertical Transport in Multi-layer MoS2. In: 6th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).
Bharadwaj, Krishna B and Chandrasekar, Hareesh and Nath, Digbijoy and Pratap, Rudra and Raghavan, Srinivasan (2016) Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49 (26).
Bharadwaj, Krishna B and Nath, Digbijoy and Pratap, Rudra and Raghavan, Srinivasan (2016) Making consistent contacts to graphene: effect of architecture and growth induced defects. In: NANOTECHNOLOGY, 27 (20).
