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Hudait, Mantu Kumar and Krupanidhi, SB (2000) Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes. In: Solid-State Electronics, 44 (6). pp. 1089-1097.
Hudait, Mantu Kumar and Krupanidhi, SB (2000) Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation. In: Materials Research Bulletin, 35 (6). pp. 909-919.
Hudait, Mantu Kumar and Krupanidhi, SB (2000) Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy. In: Materials Research Bulletin, 35 (1). pp. 125-133.
Hudait, Mantu Kumar and Krupanidhi, SB (1999) Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions. In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 17 (3). 1003 -1010.
Hudait, Mantu Kumar and Krupanidhi, SB (1998) Correlation of compensation in Si-doped GaAs between electrical and optical methods. In: Solid State Communications, 108 (7). pp. 457-461.
Hudait, Mantu Kumar and Modak, Prasanta and Hardikar, Shyam and Krupanidhi, SB (1997) Zn incorporation and band gap shrinkage in p-type GaAs. In: Journal of Applied Physics, 82 (10). pp. 4931-4937.
Hudait, Mantu Kumar and Modak, Prasanta and Hardikar, Shyam and Krupanidhi, SB (1997) Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers. In: Solid State Communications, 103 (7). pp. 411-416.
Hudait, Mantu Kumar and Modak, Prasanta and Krupanidhi, SB (1996) Growth and Characterization of GaAs Epitaxial Layers by MOCVD. In: MRS Proceedings, 421 .
