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Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers

Hudait, Mantu Kumar and Modak, Prasanta and Hardikar, Shyam and Krupanidhi, SB (1997) Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers. In: Solid State Communications, 103 (7). pp. 411-416.

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A detailed analysis of low temperature photoluminescence (PL) spectro- scopy on undoped high quality GaAs is presented. For undoped GaAs epitaxial layers grown by low pressure metal organic chemical vapor deposition under different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. The V/III ratio has strong effect on the optical properties of undoped GaAs epitaxial layers, When the V/III ratio was varied from 45 to 87, the electron concentration, n, of undoped GaAs increased with increasing V/III ratio. Below the V/III ratio of 45 in our case, the sample exhibited a p-type behavior, which has been identified by photoluminescence as well as depth profiling by Electra-chemical Capacitance Voltage (ECV) profiler.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: A.semiconductors
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 23 Jun 2007
Last Modified: 19 Sep 2010 04:36
URI: http://eprints.iisc.ac.in/id/eprint/10175

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