ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Browse by Journal / Conference

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Number of items: 9.

Soman, Rohith and Raghavan, Srinivasan and Bhat, Navakanta (2019) An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (12).

Solanke, Swanand V and Rathkanthiwar, Shashwat and Kalra, Anisha and Mech, Roop Kumar and Rangarajan, Muralidharan and Raghavan, Srinivasan and Nath, Digbijoy N (2019) Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and beta-In2Se3/GaN. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (7).

Gangavarapu, PR Yasasvi and Sharma, Anjanashree Mankala Ramakrishna and Naik, AK (2019) PECVD grown silicon nitride ultra-thin films for CNTFETs. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (6).

Kumar, Prem DS and Tippireddy, Sahil and Ramakrishnan, Anbalagan and Chen, Kuei-Hsien and Malar, P and Mallik, Ramesh Chandra (2019) Thermoelectric and electronic properties of chromium substituted tetrahedrite. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (3).

Gangavarapu, Yasasvi PR and Sharma, Anjanashree Mankala Ramakrishna and Ganapathi, KL and Mohan, Sangeneni and Naik, AK (2019) Dielectric based charge carrier tuning for CNT CMOS inverters. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (1).

Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).

Chandrasekar, Hareesh and Singh, Manikant and Raghavan, Srinivasan and Bhat, Navakanta (2015) Estimation of background carrier concentration in fully depleted GaN films. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11).

Ganapathi, Kolla Lakshmi and Bhat, Navakanta and Mohan, Sangeneni (2014) Influence of O-2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29 (5).

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) A physics-based flexural phonon-dependent thermal conductivity model for single layer graphene. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (1).

This list was generated on Sun Apr 14 10:15:38 2024 IST.