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PECVD grown silicon nitride ultra-thin films for CNTFETs

Gangavarapu, PR Yasasvi and Sharma, Anjanashree Mankala Ramakrishna and Naik, AK (2019) PECVD grown silicon nitride ultra-thin films for CNTFETs. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (6).

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Official URL: https://dx.doi.org/10.1088/1361-6641/ab1d31


As-fabricated carbon nanotube field effect transistors (CNTFLTs) exhibit p-type nature. In this work, silicon nitride (SiNx) films are deposited on CNTs to realize n-type CNTELTs. This method of fabricating n-type CNTELTs is advantageous as SiNx film serves both as a passivation layer and as a top-gate dielectric. There has been extensive work done on SiNx passivation phenomena previously, but very few have investigated the properties of ultra-thin SiNx films with thickness less than 20 nm. In this work, the ultra-thin SiNx films are deposited using plasma enhanced chemical vapor deposition (PECVD) method. This paper discusses the systematic investigation of the effect of PECVD process parameters such as flow rates of precursor gasses (NH3, SiH4), power of electrodes and deposition temperature on the properties of SiNx films such as refractive index, dielectric constant and stoichiometry. The quality of the SiNx thin films obtained is comparable with several reports that have investigated thicker films Using these ultra-thin SiNx films, we implement a CNTELT based logic inverter. The results indicate that ultra-thin films of SiNx have great potential in future transistor technology.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IOP PUBLISHING LTD
Keywords: PECVD; ultra-thin films; carbon nanotube field effect transistor; top-gate dielectric; logic inverter
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 11 Mar 2020 09:28
Last Modified: 11 Mar 2020 09:28
URI: http://eprints.iisc.ac.in/id/eprint/62859

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