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Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M (2020) Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure. In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 13 - 18 September 2020, Virtual, Online, pp. 341-344.

Kranthi, NK and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2019) Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip. In: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, 19 May 2019-23 May 2019, Shanghai, pp. 407-410.

This list was generated on Mon Apr 15 06:23:33 2024 IST.