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Hemanjaneyulu, K and Kumar, J and Shrivastava, M (2022) Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs. In: IEEE Electron Device Letters, 43 (4). pp. 635-638.
Charan, VS and Vura, S and Muralidharan, R and Raghavan, S and Nath, DN (2021) Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon. In: IEEE Electron Device Letters, 42 (4). pp. 497-500.
Bansiwal, A and Raina, S and Vinoy, KJ and Datta, SK (2020) A Post-Loaded Rectangular Reentrant Cavity for Broadband Multiple-Beam Klystron. In: IEEE Electron Device Letters, 41 (6). pp. 916-919.
Mondal, S and Paul, T and Ghosh, A and Venkataraman, V (2020) Gate-Controllable Electronic Trap Detection in Dielectrics. In: IEEE Electron Device Letters, 41 (5). pp. 717-720.
Bhattacharya, P and Sinha, R and Thakur, BK and Parab, V and Shrivastava, M and Sambandan, S (2020) Adaptive Dielectric Thin Film Transistors-A Self-Configuring Device for Low Power Electrostatic Discharge Protection. In: IEEE Electron Device Letters, 41 (1). pp. 66-69.
Bhattacharya, Sitangshu and Amalraj, Rex and Mahapatra, Santanu (2011) Physics-Based Thermal Conductivity Model for Metallic Single-Walled Carbon Nanotube Interconnects. In: IEEE Electron Device Letters, 32 (2). pp. 203-205.
Prakash, S and Asokan, S and Ghare, DB (1997) A Guideline for Designing Chalcogenide-Based Glasses for Threshold Switching Characteristics. In: IEEE Electron Device Letters, 18 (2). pp. 45-47.
