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Kranthi, NK and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2020) Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May 2020, Virtual, Online; United States.
Karmel Kranthi, N and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2019) Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Paul, M and Sampath Kumar, B and Gossner, H and Shrivastava, M (2020) Engineering Schemes for Bulk FinFET to Simultaneously Improve ESD/Latch-Up Behavior and Hot Carrier Reliability. In: IEEE Transactions on Electron Devices, 67 (7). pp. 2745-2751.
