An Experimental Technique for Detecting False Turn-on of SiC MOSFETs

Mandal, M and Roy, SK and Basu, K (2024) An Experimental Technique for Detecting False Turn-on of SiC MOSFETs. In: UNSPECIFIED, pp. 2456-2460.

PDF con_pro_iee_app_pow_ele_con_exp_2024. pdf..pdf - Published Version Restricted to Registered users only Download (2MB) | Request a copy

Abstract

Due to the increased likelihood of a potential dc bus shoot-through and eventual device failure, detection of false turn-on of SiC MOSFET is essential. However, detecting false turn-on through experiments is challenging due to the difficulty in measuring the actual gate-source voltage and channel current of the device. This paper presents an experimental method to detect the occurrence of false turn-on of SiC MOSFETs when used in a half-bridge configuration. The false turn-on event causes a device overcurrent and slower drain-source voltage transitions, which are used as indicators for the experimental method. The method is verified through DPT experiments and SPICE simulation for a 1.2kV SiC MOSFET for a range of operating conditions. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Crosstalk; MOSFET devices; Silicon; SPICE, Detection; Device failures; DPT; Experimental methods; Experimental techniques; False turn-on; MOS-FET; Shoot-through; SiC MOS-FET; SiC MOSFETs, Silicon carbide
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	01 Jun 2024 10:37
Last Modified:	01 Jun 2024 10:37
URI:	https://eprints.iisc.ac.in/id/eprint/85144

Actions (login required)

View Item