Ray, P and Verma, R and Nyak, B and Chakraborty, SK and Shrivastava, M and Sahoo, PK (2024) Probing the Origin of Photocurrent in 2D Bilayer MoSe-WSe Lateral Heterostructure. In: UNSPECIFIED.
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Abstract
We use a simple and robust water-assisted one-pot CVD method to demonstrate the fabrication of electronic-grade bilayer 2D MoSe2-WSe2 lateral heterostructures (LHS). Using photoluminescence spectroscopy and transport measurements in 2D- LHS-based FET geometry, we evaluated the nature of majority charge carriers, mobility, transconductance, carrier density, diode and phototransistor performance as a function of gate voltage and laser exposure. These 2D LHS with type-II band alignment, precise interface, and atomic thickness present promising avenues for diverse optoelectronic applications. © 2024 IEEE.
Item Type: | Conference Paper |
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Publication: | IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc. |
Keywords: | Carrier mobility; Field effect transistors; Photoluminescence spectroscopy, 2d field effect transistor; 2D fields; 2d semiconductor; Bi-layer; CVD method; Field-effect transistor; Lateral heterostructure; One pot; Simple++; Water assisted, Heterojunctions |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 03 Jun 2024 07:21 |
Last Modified: | 03 Jun 2024 07:21 |
URI: | https://eprints.iisc.ac.in/id/eprint/85131 |
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