Das, BK and Das, T and Das, D and Parashar, K and Parashar, SKS and Kumar, R and Anupama, AV and Sahoo, B (2024) Negative temperature co-efficient of resistance behaviour of Cr doped ZnO nanoceramics. In: Materials Science and Engineering: B, 299 .
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Abstract
Here, High Energy Ball Milling (HEBM) is used to prepare Cr doped ZnO (Zn1-xCrxO, x = 0�0.04) nanoceramics and their electrical behaviour is studied in detail. The X-ray diffraction suggests a hexagonal wurtzite structure. The Rietveld refinement XRD pattern of the sample calcined at 900 °C suggests that up to 4 at of Cr can be doped into the ZnO structure. After sintering, the growth in the particle size was observed for Cr doped ZnO samples. The complex impedance behaviour of samples suggests a decrease in resistance with temperature. This shows the Negative Temperature Coefficient of Resistance (NTCR) characteristic of the Cr doped ZnO sample in the studied temperature range (300�500 °C). At higher temperature, the electrical relaxation behaviour is of the non-Debye type as observed from the relaxation time distribution. The equivalent electrical circuit of ZnO and Cr doped ZnO ceramic samples are a parallel arrangement of bulk capacitance (Cb) and bulk resistance (Rb). © 2023 Elsevier B.V.
Item Type: | Journal Article |
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Publication: | Materials Science and Engineering: B |
Publisher: | Elsevier Ltd |
Additional Information: | The copyright for this article belongs to Elsevier Ltd. |
Keywords: | Ball milling; II-VI semiconductors; Lasers; Particle size; Rietveld refinement; Sintering; Temperature; Zinc oxide; Zinc sulfide, Cr doped ZnO; Cr-doped; Doped ZnO; Electrical behaviors; FESEM; High-energy ball milling; Nano ceramics; Negative temperature coefficient of resistance behavior; Negative temperature coefficient of resistances; Resistance behaviors, X ray photoelectron spectroscopy |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 28 Feb 2024 07:06 |
Last Modified: | 28 Feb 2024 07:06 |
URI: | https://eprints.iisc.ac.in/id/eprint/83717 |
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