Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2FETs

Patbhaje, U and Verma, R and Kumar, J and Ansh, A and Shrivastava, M (2023) Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2FETs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Abstract

MoSe2 is a wonderful ambipolar 2D material that provides a great platform for future electronics but lacks analysis for operation under electrical stress. This work focuses on parameter drifts observed in MoSe2 FETs due to evolution of channel as function of time and applied field during which captured stress current shows increment trends that does not saturate even after 1000 seconds of operation. ID(max) improvement of 42%, VT shifts by 380%, SS improvement by 30% and mobility increment by 33% presents unreliable scenarios in operation. This has been attributed to persistent strain in channel that manifests as improved ordering in channel that points to contact region being susceptible to performance degradation in MoSe2 FETs.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Degradation; FET; MoSe2; Reliability; TMDs
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 10:45
Last Modified:	07 Jul 2023 10:45
URI:	https://eprints.iisc.ac.in/id/eprint/82114

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