Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices

Jatin, J and Monishmurali, M and Shrivastava, M (2023) Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Abstract

The premature failure of a device under ESD stress causes the failure current to not scale with the number of fingers which is not desired. This work, for the first time, presents multi-finger turn-on as a potential cause of premature failure in multi-finger drain extended high voltage nanosheet devices. Detailed physical insights were developed into the multi-finger turn-on behavior. Further, the correlation with different device parameters has been used to find the cause for the non-uniform conduction in the device.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Drain-Extended; Electrostatic Discharge Reliability; GAA; Multi-finger; Nanosheets; TCAD
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 06:32
Last Modified:	07 Jul 2023 06:32
URI:	https://eprints.iisc.ac.in/id/eprint/82107

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