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Emergent quantum transport due to quenched magnetic impurity scattering by antiferromagnetic proximity in SrCuO2/ SrIrO3

Jana, S and Senapati, T and Bhat, SG and Sarangi, SN and Senapati, K and Samal, D (2023) Emergent quantum transport due to quenched magnetic impurity scattering by antiferromagnetic proximity in SrCuO2/ SrIrO3. In: Physical Review B, 107 (13).

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Official URL: https://doi.org/10.1103/PhysRevB.107.134415

Abstract

Through an antiferromagnetic proximity effect, we demonstrate the evidence for quenched magnetic impurity scattering in a spin-orbit-coupled semimetal SrIrO3 proximitized with an antiferromagnetic SrCuO2 layer from quantum interference originated magnetoconductance study. Two distinct observations, i.e., (i) enhanced effective phase coherence length (lφ) and (ii) emergence of chiral-anomaly-induced topological response in longitudinal magnetoconductance (B - ||E - ), signify that the magnetic impurity scattering is suppressed in the SrCuO2/SrIrO3 bilayer. The quenching of magnetic impurity scattering is discussed in the framework of the antiferromagnetic proximity effect, which is originated from spin Andreev reflection at the SrCuO2/SrIrO3 interface. This work unfolds a practical means to circumvent the detrimental effect of unintended magnetic impurity scattering and preserve quantum phenomena in complex materials.

Item Type: Journal Article
Publication: Physical Review B
Publisher: American Physical Society
Additional Information: The copyright for this article belongs to American Physical Society.
Keywords: Antiferromagnetism; Coherent scattering; Copper compounds; Quantum chemistry; Quantum theory, Antiferromagnetics; Chiral anomaly; Impurity scattering; Magnetic impurity; Magnetoconductance; Phase-coherence length; Proximity effects; Quantum interference; Quantum transport; Spin orbits, Strontium compounds
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 15 Jun 2023 08:02
Last Modified: 15 Jun 2023 08:02
URI: https://eprints.iisc.ac.in/id/eprint/81965

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